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Scientific Contributions
Risk mitigation for systems with changed mission profile and/or manufacturing technologies along global supply chains
by DREYBRODT, J Seminar: VDE ITG – Expert Group MN 5.6 – fWLR / Wafer Level Reliability, Reliability - Simulation & Qualification, Fraunhofer IKTS Location: Dresden, Germany, May 23-25, 2022Product Qualifications from the viewpoint of a Fabless Company
by DREYBRODT, J Seminar: VDE ITG – Expert Group MN 5.6 – fWLR / Wafer Level Reliability, Reliability - Simulation & Qualification, X-Fab Dresden Location: Dresden, Germany, May 27-29, 2018System Reliability and Qualification Strategies for Semiconductor Devices
by DREYBRODT, J Seminar University of Applied Science Darmstadt Location: Darmstadt, Germany, January 09, 2017Failure mechanisms in sensor packages under harsh field conditions
by DREYBRODT, J Seminar: Swiss Federal Laboratories for Materials Science and Technology (Empa) Location: Zurich, Switzerland, May 19, 2016Safe Launch as method of risk reduction during product volume ramps
by DREYBRODT, J Seminar: Rood Microtech Automotive Seminar Location: Stuttgart, Germany, October 22, 2015Failure mechanism of VCSELs in optical mouse applications at non-hermetic conditions
by DREYBRODT, J; MALACARNE, F Conference: 22nd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Location: Hsinchu, Taiwan June 29 – July 02, 2015 Published: 2015The last miles to achieve 0 ppm - Experiences from 5 years Continous Improvement for an ASIC Family
by DREYBRODT, J Seminar: 9th Meeting of VDE ITG – Expert Group 8.5.6 – fWLR / Wafer Level Reliability, Reliability - Simulation & Qualification, Fraunhofer Institute for Integrated Circuits IIS Location: Dresden, Germany, May 12-13, 2015Study of the UBM to copper interface robustness of solder bumps in flip chip packages
by DREYBRODT, J; DUPRAZ, Y MICROELECTRONICS RELIABILITY, Volume 54, Issues 9–10, September–October 2014, Pages 1969-1971 25th EUROPEAN SYMPOSIUM ON RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (ESREF), 29.09. - 02.10.2014, Berlin Published: 2014Robustness of the UBM to Copper Interface for Solder Bumps in Flip Chip Packages
by DREYBRODT, J Seminar: 8th Meeting of VDE ITG – Expert Group 8.5.6 – fWLR / Wafer Level Reliability, Reliability - Simulation & Qualification, Fraunhofer Institute for Microelectronic Circuits and Systems Location: Duisburg, Germany, June 3-4, 2014Study of process influences on the break down limit of High Voltage transistors in an embedded EEPROM CMOS technology by using EMMI and Nanoprobing
By: ACOVIC, A; DREYBRODT, J Conference: 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Location: Suzhou, China, July 15-19, 2013 Published: 2013Analysis of VCSEL Laser in optical computer-mice
by DREYBRODT, J Seminar: 29th Meeting of VDE ITG – ITG Expert Group FB 8.5 – fWLR / Quality and Reliability of Integrated Circuits, Location: Bad Schandau, Germany, May 15-16, 2012Root Causes of Bondpad Contamination and the Influence on Wirebonding Reliability
by DREYBRODT, J Seminar: 28th Meeting of VDE ITG – ITG Expert Group FB 8.5 – fWLR / Quality and Reliability of Integrated Circuits, Location: Grainau, Germany, May 31- Jun 1, 2011DYNAMICS OF CARRIER-CAPTURE PROCESSES IN GAXIN1- XAS/GAAS NEAR-SURFACE QUANTUM-WELLS
By: DREYBRODT, J; DAIMINGER, F; REITHMAIER, JP; et al. PHYSICAL REVIEW B Volume: 51 Issue: 7 Published: 1995EMISSION-SPECTRA AND LIFETIMES OF NEAR-SURFACE GAINAS/GAAS QUANTUM-WELLS
By: DREYBRODT, J; DAIMINGER, F; REITHMAIER, JP; et al. Conference: 21st International Symposium on Compound Semiconductors Location: SAN DIEGO, CA Date: SEP 18-22, 1994 COMPOUND SEMICONDUCTORS 1994 Book Series: INSTITUTE OF PHYSICS CONFERENCE SERIES Issue: 141 Published: 1995INFLUENCE OF THE CAP LAYER THICKNESS ON THE OPTICAL-PROPERTIES OF NEAR-SURFACE GAINAS/GAAS QUANTUM-WELLS
By: DREYBRODT, J; FALLER, F; FORCHEL, A; et al. Conference: SYMP ON MATERIALS FOR OPTOELECTRONIC DEVICES, OEICS ( OPTOELECTRONICS INTEGRATED CIRCUITS ) AND PHOTONICS Location: STRASBOURG, FRANCE Date: MAY 04-07, 1993 MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE Volume: 21 Issue: 2-3 Published: 1993OPTICAL-PROPERTIES OF GA0.8IN0.2AS/GAAS SURFACE QUANTUM-WELLS
By: DREYBRODT, J; FORCHEL, A; REITHMAIER, JP PHYSICAL REVIEW B Volume: 48 Issue: 19 Published: 1993EXCITONIC TRANSITIONS IN GAINAS/GAAS SURFACE QUANTUM-WELLS
By: DREYBRODT, J; FORCHEL, A; REITHMAIER, JP Conference: 3rd International Conference on Optics of Excitons in Confined Systems Location: UNIV MONTPELLIER II, MONTPELLIER, FRANCE Date: AUG 30-SEP 02, 1993 JOURNAL DE PHYSIQUE IV Volume: 3 Issue: C5 Published: 1993PHOTOLUMINESCENCE STUDY OF IMPLANTATIONINDUCED INTERMIXING OF IN0.53GA0.47AS/INP SINGLE QUANTUM-WELLS BY ARGON IONS
By: OSHINOWO, J; DREYBRODT, J; FORCHEL, A; et al. JOURNAL OF APPLIED PHYSICS Volume: 74 Issue: 3 Published: 1993INFLUENCE OF THE CAP LAYER THICKNESS ON THE OPTICAL PROPERTIES OF NEAR SURFACE GAINAS/GAAS QUANTUM WELLS
By: DREYBRODT, J; FALLER, F; FORCHEL, A; et al. Conference: Symposium A on Semiconductor Materials for Optoelectronic Devices, OEICs and Photonics, at the 1993 E-MRS Spring Conference Location: STRASBOURG, FRANCE Date: MAY 04-07, 1993 Book Series: EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA-PROCEEDINGS Volume: 40 Published: 1993LATERAL THERMAL-STABILITY MODULATION FOR THE DEFINITION OF INGAAS/INP QUANTUM WIRES
By: OSHINOWO, J; FORCHEL, A; DREYBRODT, J; et al. Conference: INTERNATIONAL CONF ON MICROLITHOGRAPHY Location: ROME, ITALY Date: SEP 17-19, 1991 MICROELECTRONIC ENGINEERING Volume: 17 Issue: 1-4 Published: 1992HIGH-RESOLUTION DEFINITION OF BURIED IN0.53GA0.47AS/INP WIRES BY IMPLANTATION INDUCED INTERMIXING
By: OSHINOWO, J; DREYBRODT, J; FORCHEL, A; et al. Book Group Author(s): IEEE Conference: 4TH INTERNATIONAL CONF ON INDIUM PHOSPHIDE AND RELATED MATERIALS Location: NEWPORT, RI Date: APR 21-24,1992 FOURTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS Published: 1992You want to know more about me?